PBLS1503V datasheet(4/14 Pages) PHILIPS

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9397 750 13435

Product data sheet

Rev. 02 — 25 November 2004

4 of 14

Philips Semiconductors

PBLS1503Y; PBLS1503V

15 V PNP BISS loadswitch

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 8:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Transistor TR1: PNP

ICBO

collector-base cut-off

current

VCB = −15 V; IE = 0 A

−100

VCB = −15 V; IE = 0 A; Tj = 150 °C-

−50

µA

ICES

collector-emitter

cut-off current

VCE = −15 V; VBE = 0 V

−100

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

−100

hFE

DC current gain

VCE = −2 V; IC = −10 mA

200

VCE = −2 V; IC = −100 mA

[1] 150

VCE = −2 V; IC = −500 mA

[1] 90

VCEsat

collector-emitter

saturation voltage

IC = −10 mA; IB = −0.5 mA

−25

IC = −200 mA; IB = −10 mA

−150

IC = −500 mA; IB = −50 mA

[1] --

−250

RCEsat

equivalent

on-resistance

IC = −500 mA; IB = −50 mA

[1] -

300

500

Ω

VBEsat

base-emitter

saturation voltage

IC = −500 mA; IB = −50 mA

[1] --

−1.1

VBEon

base-emitter turn-on

voltage

VCE = −2 V; IC = −100 mA

[1] --

−0.9

transition frequency

VCE = −5 V; IC = −100 mA;

f = 100 MHz

100

280

MHz

collector capacitance

VCB = −10 V; IE = ie = 0 A;

f=1MHz

--10

Transistor TR2: NPN

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE = 30 V; IB = 0 A

µA

VCE = 30 V; IB = 0 A; Tj = 150 °C

--50

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A

400

µA

hFE

DC current gain

VCE = 5 V; IC = 5 mA

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

150

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA

1.1

0.8

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 10 mA

2.5

1.8

bias resistor 1 (input)

Ω

R2/R1

bias resistor ratio

0.8

1.2

collector capacitance

VCB =10V;IE =ie = 0 A; f = 1 MHz

2.5

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