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PBLS1502Y датащи(PDF) 1 Page - NXP Semiconductors |
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PBLS1502Y датащи(HTML) 1 Page - NXP Semiconductors |
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1 / 14 page ![]() 1. Product profile 1.1 General description Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package. 1.2 Features s Low VCEsat (BISS) transistor and resistor-equipped transistor in one package s Low ‘threshold’ voltage ( < 1 V) compared to MOSFET s Low drive power required s Space-saving solution s Reduction of component count. 1.3 Applications s Supply line switches s Battery charger switches s High-side switches for LEDs, drivers and backlights s Portable equipment. 1.4 Quick reference data PBLS1502Y; PBLS1502V 15 V PNP BISS loadswitch Rev. 02 — 4 November 2004 Product data sheet Table 1: Product overview Type number Package Philips EIAJ PBLS1502Y SOT363 SC-88 PBLS1502V SOT666 - Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP: low VCEsat transistor VCEO collector-emitter voltage open base - - −15 V IC collector-current (DC) - - −500 mA RCEsat equivalent on-resistance IC =−500 mA; IB =−50 mA - 300 500 m Ω TR2; NPN: resistor-equipped transistor VCEO collector-emitter voltage open base - - 50 V |
Аналогичный номер детали - PBLS1502Y |
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Аналогичное описание - PBLS1502Y |
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