| поискавой системы для электроныых деталей |
|
PBLS1502Y датащи(PDF) 4 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
PBLS1502Y датащи(HTML) 4 Page - NXP Semiconductors |
|
4 / 14 page ![]() 9397 750 13448 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 4 November 2004 4 of 14 Philips Semiconductors PBLS1502Y; PBLS1502V 15 V PNP BISS loadswitch 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Transistor TR1: PNP ICBO collector-base cut-off current VCB =−15 V; IE = 0 A - - −100 nA VCB =−15 V; IE = 0 A; Tj = 150 °C- - −50 µA ICES collector-emitter cut-off current VCE =−15 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB =−5 V; IC = 0 A - - −100 nA hFE DC current gain VCE =−2 V; IC =−10 mA 200 - - VCE =−2 V; IC =−100 mA [1] 150 - - VCE =−2 V; IC =−500 mA [1] 90 - - VCEsat collector-emitter saturation voltage IC =−10 mA; IB =−0.5 mA - - −25 mV IC =−200 mA; IB =−10 mA - - −150 mV IC =−500 mA; IB =−50 mA [1] -- −250 mV RCEsat equivalent on-resistance IC =−500 mA; IB =−50 mA [1] - 300 500 m Ω VBEsat base-emitter saturation voltage IC =−500 mA; IB =−50 mA [1] -- −1.1 V VBEon base-emitter turn-on voltage VCE =−2 V; IC =−100 mA [1] -- −0.9 V fT transition frequency VCE = −5 V; IC =−100 mA; f = 100 MHz 100 280 - MHz Cc collector capacitance VCB =−10 V; IE = ie = 0 A; f = 1 MHz --10 pF Transistor TR2: NPN ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C --50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 900 µA hFE DC current gain VCE = 5 V; IC = 10 mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.1 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 2.5 1.9 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |