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PBLS1502Y датащи(PDF) 4 Page - NXP Semiconductors

номер детали PBLS1502Y
подробное описание детали  15 V PNP BISS loadswitch
PDF  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 4 November 2004
4 of 14
Philips Semiconductors
PBLS1502Y; PBLS1502V
15 V PNP BISS loadswitch
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Transistor TR1: PNP
ICBO
collector-base cut-off
current
VCB =−15 V; IE = 0 A
-
-
−100
nA
VCB =−15 V; IE = 0 A; Tj = 150 °C-
-
−50
µA
ICES
collector-emitter
cut-off current
VCE =−15 V; VBE = 0 V
-
-
−100
nA
IEBO
emitter-base cut-off
current
VEB =−5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE =−2 V; IC =−10 mA
200
-
-
VCE =−2 V; IC =−100 mA
[1] 150
-
-
VCE =−2 V; IC =−500 mA
[1] 90
-
-
VCEsat
collector-emitter
saturation voltage
IC =−10 mA; IB =−0.5 mA
-
-
−25
mV
IC =−200 mA; IB =−10 mA
-
-
−150
mV
IC =−500 mA; IB =−50 mA
[1] --
−250
mV
RCEsat
equivalent
on-resistance
IC =−500 mA; IB =−50 mA
[1] -
300
500
m
VBEsat
base-emitter
saturation voltage
IC =−500 mA; IB =−50 mA
[1] --
−1.1
V
VBEon
base-emitter
turn-on voltage
VCE =−2 V; IC =−100 mA
[1] --
−0.9
V
fT
transition frequency
VCE = −5 V; IC =−100 mA;
f
= 100 MHz
100
280
-
MHz
Cc
collector capacitance
VCB =−10 V; IE = ie = 0 A;
f
= 1 MHz
--10
pF
Transistor TR2: NPN
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
1
µA
VCE = 30 V; IB = 0 A; Tj = 150 °C
--50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
900
µA
hFE
DC current gain
VCE = 5 V; IC = 10 mA
30
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 µA
-
1.1
0.5
V
VI(on)
on-state input voltage
VCE = 0.3 V; IC = 20 mA
2.5
1.9
-
V
R1
bias resistor 1 (input)
3.3
4.7
6.1
k
R2/R1
bias resistor ratio
0.8
1
1.2
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
-
-
2.5
pF



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