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FSUSB104 датащи(PDF) 4 Page - ON Semiconductor |
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FSUSB104 датащи(HTML) 4 Page - ON Semiconductor |
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4 / 9 page ![]() www.onsemi.com 4 DC Electrical Characteristics All typical values are at 25°C unless otherw ise specified. Symbol Parameter Conditions VCC (V) TA=- 40ºC to +85ºC Units Min. Typ. Max. VIK Clamp Diode Voltage IIN=-18 mA 3.0 -1.2 V VIH Input Voltage High 3.0 to 3.6 1.3 V 4.3 1.7 V VIL Input Voltage Low 3.0 to 3.6 0.5 V 4.3 0.7 V IIN Control Input Leakage VSW=0 to VCC 4.3 -1 1 µA IOZ Off State Leakage 0 ≤ Dn, HSD1n, HSD2n ≤ 3.6V 4.3 -2 2 µA IOFF Pow er-Off Leakage Current (All I/O Ports) VSW=0 V to 4.3 V, VCC=0 V Figure 4 0 -2 2 µA RON HS Sw itch On Resistance ( 3 ) VSW=0.4 V, ION=-8 mA Figure 3, 3.0 3.9 6.5 Ω ∆RON HS Delta Ron ( 4 ) VSW=0.4 V, ION=-8 mA 3.0 0.65 Ω ICC Quiescent Supply Current VCNTRL=0 or VCC, IOUT=0 4.3 1.0 µA ICCT Increase in ICC Current per Control Voltage and VCC VCNTRL =2.6 V, VCC=4.3 V 4.3 10.0 µA VCNTRL =1.8 V, VCC=4.3 V 4.3 15.0 µA Notes: 3. Measured by the voltage drop betw een HSDn and Dn pins at the indicated current through the sw itch. On resistance is determined by the low er of the voltage on the tw o (HSDn or Dn ports). 4. Guaranteed by characterization. Not tested in production. |
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