NXP Semiconductors

BGS8L2

SiGe:C Low-noise amplifier MMIC with bypass switch for LTE

BGS8L2

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Product data sheet

Rev. 6 — 29 June 2018

COMPANY PUBLIC

8 / 18

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

f = 470 MHz, L1 = 18 nH

[1] -13.0

-9.0

-

dBm

f = 650 MHz, L1 = 18 nH

[1] -12.5

-8.5

-

dBm

f = 740 MHz, L1 = 18 nH

[1] [2] -11.0

-7.0

-

dBm

f = 740 MHz, L1 = 8.2 nH

[1] [2] -10.5

-7.5

dBm

f = 882 MHz, L1 = 8.2 nH

[1] [3] -10

-6.0

-

dBm

input power at 1 dB gain

compression

f = 943 MHz, L1 = 8.2 nH

[1] [4] -9.5

-5.5

-

dBm

f = 470 MHz, L1 = 18 nH

[1] -10.5

-5.5

-

dBm

f = 650 MHz, L1 = 18 nH

[1] -6

-1.0

-

dBm

f = 740 MHz, L1 = 18 nH

[1] [2] -5.5

-0.5

-

dBm

f = 740 MHz, L1 = 8.2 nH

[1] [2] -4.0

+1.0

dBm

f = 882 MHz, L1 = 8.2 nH

[1] [3] -4.0

+1.0

-

dBm

input third-order intercept point

f = 943 MHz, L1 = 8.2 nH

[1] [4] -4.0

+1.0

-

dBm

K

Rollett stability factor

1

-

-

turn-on time

the gain

-

-

2.7

μs

turn-off time

of the gain

-

-

0.6

μs