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BGS8L2 датащи(PDF) 3 Page - NXP Semiconductors

номер детали BGS8L2
подробное описание детали  SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
PDF  18 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

BGS8L2 датащи(HTML) 3 Page - NXP Semiconductors

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NXP Semiconductors
BGS8L2
SiGe:C Low-noise amplifier MMIC with bypass switch for LTE
BGS8L2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2018. All rights reserved.
Product data sheet
Rev. 6 — 29 June 2018
COMPANY PUBLIC
3 / 18
4 Quick reference data
Table 1. Quick reference data
f = 882 MHz; VCC = 2.8 V; VI(CTRL) ≥ 0.8 V; Tamb = 25 °C; input matched to 50 Ω using a 8.2 nH inductor; unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
supply voltage
1.5
-
3.1
V
in gain mode
-
5.2
-
mA
ICC
supply current
in bypass mode
-
-
1
μA
in gain mode
[1] -
13.0
-
dB
Gp
power gain
in bypass mode
[1] -
-1.9
-
dB
NF
noise figure
[1][2] -
0.85
-
dB
Pi(1dB)
input power at 1 dB gain compression
[1] -
-1.0
-
dBm
IP3i
input third-order intercept point
[1] -
1.5
-
dBm
[1]
E-UTRA operating band 5 (869 MHz to 894 MHz).
[2]
PCB losses are subtracted.
5 Ordering information
Table 2. Ordering information
Package
Type number
Name
Description
Version
BGS8L2
XSON6
plastic extremely thin small outline package; no
leads; 6 terminals; body 1.1 × 0.7 × 0.37 mm
SOT1232
OM17005
EVB
BGS8L2 evaluation board
-
6 Marking
Table 3. Marking codes
Type number
Marking code
BGS8L2
M



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