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BGS8H2 датащи(PDF) 11 Page - NXP Semiconductors |
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BGS8H2 датащи(HTML) 11 Page - NXP Semiconductors |
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11 / 15 page ![]() NXP Semiconductors BGS8H2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE BGS8H2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved. Product data sheet Rev. 3 — 29 June 2018 COMPANY CONFIDENTIAL 11 / 15 14 Package outline References Outline version European projection Issue date IEC JEDEC JEITA SOT1232 sot1232_po 13-04-12 13-11-08 Unit mm min nom max 1.05 0.1 0.05 A Dimensions (mm are the original dimensions) Note 1. Dimension A is including plating thickness. SOT1232 A1 D 0.65 0.4 E e1 L V Y 0.40 0.04 0.34 1.10 0.4 0.70 0.37 1.15 0.75 0.1 Y1 0.17 0.25 e b 0.17 0.20 0.20 0.25 pin 1 index area pin 1 index area (4×) D A E B C y1 (6×) v A B L (6×) v A B b e (6×) 1 3 6 4 e1 e1 scale 0 1 mm XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm A A1 y C Figure 4. Package outline SOT1232 (XSON6) |
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