NXP Semiconductors

BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8H2

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© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 3 — 29 June 2018

COMPANY CONFIDENTIAL

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9 Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

See legal section: "disclaimers" paragraph "Limiting values".

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

RF input AC coupled

[1] -0.5

+5.0

V

input voltage on pin CTRL

[1][2] -0.5

+5.0

V

input voltage on pin RF_IN

[1][2] -0.5

+5.0

V

input voltage on pin RF_OUT

[1][2][3] -0.5

+5.0

V

input power

[1] -

26

dBm

total power dissipation

-

55

mW

storage temperature

-65

+150

°C

junction temperature

-

150

°C

Human Body Model (HBM) according to

ANSI/ESDA/JEDEC standard JS-001

-

±2

kV

electrostatic discharge voltage

Charged Device Model (CDM) according to

JEDEC standard JESD22-C101C

-

±1

kV

[1]

[2]

[3]

The RF input and RF output are AC coupled through internal DC blocking capacitors.

10 Recommended operating conditions

Table 6. Operating conditions

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

supply voltage

[1]

1.5

-

3.1

V

ambient temperature

-40

+25

+85

°C

OFF state

-

-

0.3

V

input voltage on pin CTRL

ON state

0.8

-

V

[1]

11 Thermal characteristics

Table 7. Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to solder point

225

K/W