AFV121KH AFV121KHS AFV121KGS

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These RF power transistors are designed for pulse applications operating at

frequencies from 960 to 1215 MHz, such as distance measuring equipment

(DME), secondary radars and high power transponders for air traffic control.

These devices are suitable for use in pulse applications with large duty cycles

and long pulses, including Mode S ELM.

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

960

Pulse

(128 sec, 10% Duty Cycle)

1390 Peak

17.5

51.1

1030

1410 Peak

17.5

51.8

1090

1370 Peak

17.4

52.2

1215

1230 Peak

16.9

55.8

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

960

Pulse

(2 msec, 10% Duty Cycle)

1160 Peak

16.6

50.8

1030

1190 Peak

16.8

52.1

1090

1210 Peak

16.8

49.2

1215

1060 Peak

16.2

50.6

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(128 sec, 10%

Duty Cycle)

> 20:1 at all

Phase Angles

25 Peak

(3 dB

Overdrive)

50

No Device

Degradation

1. Measured in 960--1215 MHz reference circuit.

Features

 Internally Input and Output Matched for Broadband Operation and Ease of Use

 Device Can Be Used Single--Ended, Push--Pull, or in a Quadrature

Configuration

 High Ruggedness, Handles > 20:1 VSWR

 Integrated ESD Protection with Greater Negative Voltage Range for Improved

Class C Operation and Gate Voltage Pulsing

 Characterized with Series Equivalent Large--Signal Impedance Parameters

Typical Applications

 Air Traffic Control Systems (ATC), Including Ground--based Secondary Radars

such as Mode S ELM Interrogators

 Distance Measuring Equipment (DME)

 Mode S Transponders, Including:

– Traffic Alert and Collision Avoidance Systems (TCAS)

– Automatic Dependent Surveillance--Broadcast In and Out (ADS--B)

Using, e.g., 1090 Extended Squitter or Universal Access Transponder (UAT)

Document Number: AFV121KH

Rev. 0, 11/2015

Freescale Semiconductor

Technical Data

960–1215 MHz, 1000 W PEAK, 50 V

AIRFAST RF POWER LDMOS

TRANSISTORS

AFV121KH

AFV121KHS

AFV121KGS

NI--1230GS--4L

AFV121KGS

NI--1230S--4S

AFV121KHS

NI--1230H--4S

AFV121KH

(Top View)

Drain A

31

Figure 1. Pin Connections

42 Drain B

Gate A

Gate B

Note: The backside of the package is the

source terminal for the transistors.

 Freescale Semiconductor, Inc., 2015. All rights reserved.