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AFV121KGS датащи(PDF) 7 Page - NXP Semiconductors

номер детали AFV121KGS
подробное описание детали  RF Power LDMOS Transistors
PDF  20 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFV121KGS датащи(HTML) 7 Page - NXP Semiconductors

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AFV121KH AFV121KHS AFV121KGS
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 960–1215 MHz
REFERENCE CIRCUIT
1300
900
IRL
Gps
f, FREQUENCY (MHz)
Figure 6. Power Gain, Drain Efficiency and IRL
versus Frequency at a Constant Input Power
1150
1100
1050
1000
950
19
18
--11
60
50
–4
--6
D
16.5
16
13.5
12.5
18.5
17.5
17
40
15.5
15
1200
1250
VDD =50 Vdc,Pin =25 W,IDQ(A+B) = 100 mA
Pulse Width = 128 sec, Duty Cycle = 10%
55
45
35
--5
--7
14
14.5
13
--9
--8
--10
10
24
20
70
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain and Drain Efficiency versus
Output Power
VDD =50 Vdc, IDQ(A+B) = 100 mA
Pulse Width = 128 sec, Duty Cycle = 10%
800
0
22
18
16
14
60
50
40
30
Gps
D
200
400
600
1000
1030 MHz
960 MHz
1215 MHz
1030 MHz
960 MHz
1215 MHz
20
12
10
0
1200 1400 1600 1800
1090 MHz
1090 MHz
250
1500
900
20
950
1250
1000
60
50
f, FREQUENCY (MHz)
1000
500
750
70
40
30
1050
1100
1150
1200
1250
1300
D
Pout
VDD =50 Vdc,IDQ(A+B) = 100 mA, Pin =25 W
Pulse Width = 128 sec, Duty Cycle = 10%
Figure 8. Output Power and Drain Efficiency versus
Frequency at a Constant Input Power



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