AFT09S200W02S datasheet(3/13 Pages) NXP

3 / 13 page

AFT09S200W02SR3

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., f = 960 MHz,

Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz

Channel Bandwidth @ 5MHz Offset.

Power Gain

Gps

18.5

19.4

21.5

Drain Efficiency

D

32.5

35.6

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

6.3

6.8

—

Adjacent Channel Power Ratio

ACPR

—

–34.7

--33.0

dBc

Input Return Loss

IRL

—

–12

--9

Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1400 mA, f = 940 MHz

VSWR 10:1 at 32 Vdc, 148 W CW Output Power

(0 dB Input Overdrive from 148 W CW Rated Power)

No Device Degradation

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, 920–960 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

148

—

AM/PM

(Maximum value measured at the P3dB compression point across

the 920–960 MHz frequency range)



—

--12

—



VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

230

—

MHz

Gain Flatness in 40 MHz Bandwidth @ Pout =56 W Avg.

—

0.3

—

Gain Variation over Temperature

(–30Cto+85C)

G

—

0.018

—

dB/C

Output Power Variation over Temperature

(–30Cto+85C)

P1dB

—

0.004

—

dB/C

Table 5. Ordering Information

Device

Tape and Reel Information

Package

AFT09S200W02SR3

R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel

NI--780S--2L

1. Part internally matched both on input and output.

AFT09S200W02S датащи(PDF) 3 Page - NXP Semiconductors

AFT09S200W02S датащи(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

датащи скачать

ссылки URL