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AFT09S200W02S датащи(PDF) 2 Page - NXP Semiconductors

номер детали AFT09S200W02S
подробное описание детали  N-Channel Enhancement-Mode Lateral MOSFET
PDF  13 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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AFT09S200W02S датащи(HTML) 2 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02SR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +70
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +125
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
CW Operation @ TC =25C
Derate above 25C
CW
226
1.1
W
W/C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81C, 56 W CW, 28 Vdc, IDQ = 1400 mA, 940 MHz
RJC
0.34
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70 Vdc, VGS =0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS =32 Vdc, VGS =0 Vdc)
IDSS
—
—
5
Adc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
—
1
Adc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 270 Adc)
VGS(th)
1.0
1.5
2.0
Vdc
Gate Quiescent Voltage
(VDS =28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
2.15
—
Vdc
Fixture Gate Quiescent Voltage (4)
(VDD =28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGG(Q)
3.2
4.3
5.2
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =2.7 Adc)
VDS(on)
0.1
0.26
0.3
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. VGG =2  VGS(Q). Parameter measured on Freescale Text Fixture, due to resistor divider network on the board. Refer to Test Fixture Layout.
(continued)



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