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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AFT09MS007N датащи(PDF) 4 Page - NXP Semiconductors |
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AFT09MS007N датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 28 page  4 RF Device Data Freescale Semiconductor, Inc. AFT09MS007NT1 TYPICAL CHARACTERISTICS 160 109 90 108 107 105 100 110 120 130 140 150 106 12 1 200 08 2 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage Ciss 100 10 Figure 3. Drain Current versus Drain--Source Voltage TJ, JUNCTION TEMPERATURE (C) Figure 4. MTTF versus Junction Temperature — CW Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. VDD =7.5 Vdc 0 3 1 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 1.5 VGS =3.75 Vdc 2.5 2 1 23 4 10 3.5 Vdc TA =25C 0 3.5 4 10 46 Coss Crss Measured with 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc 0.5 57 68 9 3.25 Vdc 3Vdc 2.5 Vdc 1.59 Amps ID =1.06 Amps 1.33 Amps |
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