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AFT09MS007N датащи(PDF) 22 Page - NXP Semiconductors

номер детали AFT09MS007N
подробное описание детали  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
PDF  28 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
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AFT09MS007N датащи(HTML) 22 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
760–860 MHz BROADBAND REFERENCE CIRCUIT
Zo =2 
f = 760 MHz
f = 860 MHz
Zload
Zsource
f = 760 MHz
f = 860 MHz
VDD =7.5 Vdc, IDQ = 150 mA, Pout =7 W
f
MHz
Zsource
Zload
760
0.77 + j0.62
1.65 – j0.04
770
0.81 + j0.71
1.70 + j0.10
780
0.81 + j0.79
1.72 + j0.24
790
0.82 + j0.85
1.74 + j0.36
800
0.84 + j0.92
1.77 + j0.49
810
0.85 + j0.98
1.81 + j0.61
820
0.88 + j1.02
1.84 + j0.69
830
0.89 + j1.07
1.87 + 0.79
840
0.91 + 1.13
1.91 + j0.90
850
0.91 + j1.19
1.93 + j0.99
860
0.94 + j1.23
1.99 + j1.08
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 27. Broadband Series Equivalent Source and Load Impedance — 760–860 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource
Zload
50 
50 



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