AFT05MS006NT1

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

Designed for handheld two--way radio applications with frequencies from

136 to 941 MHz. The high gain, ruggedness and wideband performance of this

device make it ideal for large--signal, common--source amplifier applications in

handheld radio equipment.

Frequency

(MHz)

(dB)

(%)

(W)

18.3

73.0

6.0

Frequency

(MHz)

(W)

(dB)

(%)

(W)

136–174

0.19

15.5

60.0

6.0

0.15

16.3

65.0

6.4

0.20

15.2

58.5

6.7

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test

Voltage

Result

CW

> 65:1 at all

Phase Angles

0.12

(3 dB Overdrive)

10.8

No Device

Degradation

1. Measured in 520 MHz narrowband test circuit.

2. Measured in 440–520 MHz UHF broadband reference circuit.

3. Measured in 760–870 MHz UHF broadband reference circuit.

Features

 Characterized for Operation from 136 to 941 MHz

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Integrated ESD Protection

 Integrated Stability Enhancements

 Wideband — Full Power Across the Band

 Exceptional Thermal Performance

 Extreme Ruggedness

 High Linearity for: TETRA, SSB

 In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.

Typical Applications

 Output Stage VHF Band Handheld Radio

 Output Stage UHF Band Handheld Radio

 Output Stage for 700–800 MHz Handheld Radio

Document Number: AFT05MS006N

Rev. 0, 2/2014

Freescale Semiconductor

Technical Data

136–941 MHz, 6.0 W, 7.5 V

WIDEBAND

RF POWER LDMOS TRANSISTOR

AFT05MS006NT1

PLD--1.5W

Figure 1. Pin Connections

Note: The center pad on the backside of

the package is the source terminal

for the transistor.

Drain

Gate

 Freescale Semiconductor, Inc., 2014. All rights reserved.