AFT05MS006NT1

7

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND

REFERENCE CIRCUIT

0

01

2

3

4

2

1

3

4

5

0.5

1.5

2.5

3.5

4.5

7

Figure 6. Output Power versus Gate--Source Voltage

Figure 7. Power Gain, Drain Efficiency and Output

Power versus Input Power

0

6

3

0

30

50

40

10

20

15

12

9

18

60

70

80

0.02

f = 520 MHz

6

21

24

0.04

0.06

0.08

0.1

0.12

0.14 0.16 0.18

90

f

MHz





520

1.14 + j2.28

1.78 + j1.71

gate to ground.

drain to ground.

Figure 8. Narrowband Series Equivalent Source and Load Impedance — 520 MHz

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

50 

50 