FSB70625 datasheet(3/12 Pages) ONSEMI

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FSB70625 Rev. 1.2

Absolute Maximum Ratings

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Total System

1st Notes:

1. TCB is pad temperature of case bottom.

2. Marking “ * ” is calculation value or design factor.

Symbol

Parameter

Conditions

Rating

Unit

VDSS

Drain-Source Voltage of Each MOSFET

250

*ID 25

Each MOSFET Drain Current, Continuous TCB = 25°C (1st Note 1)

6.9

*ID 80

Each MOSFET Drain Current, Continuous TCB = 80°C

5.2

*IDP

Each MOSFET Drain Current, Peak

TCB = 25°C, PW < 100 s

13.9

*PD

Maximum Power Dissipation

TCB = 25°C, For Each MOSFET

Symbol

Parameter

Conditions

Rating

Unit

VDD

Control Supply Voltage

Applied Between VDD and COM

VBS

High-side Bias Voltage

Applied Between VB and VS

VIN

Input Signal Voltage

Applied Between IN and COM

-0.3 ~ VDD + 0.3

VFO

Fault Output Supply Voltage

Applied Between FO and COM

-0.3 ~ VDD + 0.3

IFO

Fault Output Current

Sink Current FO Pin

VCSC

Current Sensing Input Voltage

Applied Between Csc and COM

-0.3 ~ VDD + 0.3

Symbol

Parameter

Conditions

Rating

Unit

Operating Junction Temperature

-40 ~ 150

°C

TSTG

Storage Temperature

-40 ~ 125

°C

VISO

Isolation Voltage

60 Hz, Sinusoidal, 1 Minute, Con-

nection Pins to Heat Sink Plate

1500

Vrms

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