FS10R12VT3 datasheet(2/7 Pages) INFINEON

2 / 7 page

TechnischeInformation/TechnicalInformation

FS10R12VT3

IGBT-Module

IGBT-modules

preparedby:MB

approvedby:IG

dateofpublication:2013-10-03

revision:2.0

VorläufigeDaten

PreliminaryData

Diode,Wechselrichter/Diode,Inverter

HöchstzulässigeWerte/MaximumRatedValues

PeriodischeSpitzensperrspannung

Repetitivepeakreversevoltage

Tvj = 25°C

VRRM

1200

Dauergleichstrom

ContinuousDCforwardcurrent

PeriodischerSpitzenstrom

Repetitivepeakforwardcurrent

tP = 1 ms

IFRM

Grenzlastintegral

I²t-value

VR = 0 V, tP = 10 ms, Tvj = 125°C

I²t

33,0

A²s

CharakteristischeWerte/CharacteristicValues

min.

typ.

max.

Durchlassspannung

Forwardvoltage

IF = 10 A, VGE = 0 V

1,65

2,10

Tvj = 25°C

Tvj = 125°C

Rückstromspitze

Peakreverserecoverycurrent

IF = 10 A, - diF/dt = 650 A/µs (Tvj=125°C)

VR = 600 V

VGE = -15 V

IRM

16,0

16,5

Tvj = 25°C

Tvj = 125°C

Sperrverzögerungsladung

Recoveredcharge

IF = 10 A, - diF/dt = 650 A/µs (Tvj=125°C)

VR = 600 V

VGE = -15 V

1,20

2,00

µC

Tvj = 25°C

Tvj = 125°C

AbschaltenergieproPuls

Reverserecoveryenergy

IF = 10 A, - diF/dt = 650 A/µs (Tvj=125°C)

VR = 600 V

VGE = -15 V

Erec

0,38

0,68

Tvj = 25°C

Tvj = 125°C

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proDiode/perdiode

RthJC

2,25

2,50

K/W

Wärmewiderstand,GehäusebisKühlkörper

Thermalresistance,casetoheatsink

proDiode/perdiode

λPaste=1W/(m·K)/λgrease=1W/(m·K)

RthCH

0,70

K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

Tvj op

-40

125

°C

Modul/Module

Isolations-Prüfspannung

Isolationtestvoltage

RMS, f = 50 Hz, t = 1 min

VISOL

2,5

InnereIsolation

Internalisolation

Basisisolierung(Schutzklasse1,EN61140)

basicinsulation(class1,IEC61140)

Al2O3

Kriechstrecke

Creepagedistance

Kontakt-Kühlkörper/terminaltoheatsink

Kontakt-Kontakt/terminaltoterminal

5,0

10,0

Luftstrecke

Clearance

Kontakt-Kühlkörper/terminaltoheatsink

Kontakt-Kontakt/terminaltoterminal

3,2

7,0

VergleichszahlderKriechwegbildung

Comperativetrackingindex

CTI

> 225

min.

typ.

max.

Modulstreuinduktivität

Strayinductancemodule

LsCE

Modulleitungswiderstand,Anschlüsse-

Chip

Moduleleadresistance,terminals-chip

TC=25°C,proSchalter/perswitch

RCC'+EE'

RAA'+CC'

9,00

Ω

Lagertemperatur

Storagetemperature

Tstg

-40

125

°C

Anpresskraft für mech. Bef. pro Feder

mountig force per clamp

Gewicht

Weight

With additional insulation of the mounting clamp higher values of creepage and clearance distances to

the heatsink can be achieved. For more information call your responsible sales representative.

FS10R12VT3 датащи(PDF) 2 Page - Infineon Technologies AG

FS10R12VT3 датащи(HTML) 2 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL