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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS10R12VT3 датащи(PDF) 1 Page - Infineon Technologies AG |
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FS10R12VT3 датащи(HTML) 1 Page - Infineon Technologies AG |
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1 / 7 page  1 TechnischeInformation/TechnicalInformation FS10R12VT3 IGBT-Module IGBT-modules preparedby:MB approvedby:IG dateofpublication:2013-10-03 revision:2.0 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 10 16 A A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 20 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Ptot 64,0 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 10 A, VGE = 15 V IC = 10 A, VGE = 15 V VCE sat 1,90 2,15 2,45 V V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 0,30 mA, VCE = VGE, Tvj = 25°C VGEth 5,0 5,8 6,5 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 0,10 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 0,0 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 0,70 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,026 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 10 A, VCE = 600 V VGE = ±15 V RGon = 82 Ω td on 0,037 0,037 µs µs Tvj = 25°C Tvj = 125°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 10 A, VCE = 600 V VGE = ±15 V RGon = 82 Ω tr 0,02 0,025 µs µs Tvj = 25°C Tvj = 125°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 10 A, VCE = 600 V VGE = ±15 V RGoff = 82 Ω td off 0,29 0,39 µs µs Tvj = 25°C Tvj = 125°C Fallzeit,induktiveLast Falltime,inductiveload IC = 10 A, VCE = 600 V VGE = ±15 V RGoff = 82 Ω tf 0,09 0,15 µs µs Tvj = 25°C Tvj = 125°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 10 A, VCE = 600 V, LS = 60 nH VGE = ±15 V RGon = 82 Ω Eon 0,95 1,25 mJ mJ Tvj = 25°C Tvj = 125°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 10 A, VCE = 600 V, LS = 60 nH VGE = ±15 V RGoff = 82 Ω Eoff 0,70 1,10 mJ mJ Tvj = 25°C Tvj = 125°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC 35 A Tvj = 125°C tP ≤ 10 µs, Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 1,75 1,95 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,65 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 125 °C |
Аналогичный номер детали - FS10R12VT3 |
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Аналогичное описание - FS10R12VT3 |
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