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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISL6566 датащи(PDF) 27 Page - Renesas Technology Corp |
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ISL6566 датащи(HTML) 27 Page - Renesas Technology Corp |
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27 / 30 page  ISL6566 FN9178 Rev 4.00 Page 27 of 30 Mar 9, 2006 Thermal Management For maximum thermal performance in high current, high switching frequency applications, connecting the thermal GND pad of the ISL6566 to the ground plane with multiple vias is recommended. This heat spreading allows the part to achieve its full thermal potential. It is also recommended that the controller be placed in a direct path of airflow if possible to help thermally manage the part. Suppressing MOSFET Gate Leakage With VCC at ground potential, UGATE is high impedance. In this state, any stray leakage has the potential to deliver charge to the gate of the upper MOSFET. If UGATE receives sufficient charge to bias the device on, a low impedance path will be connected between the upper MOSFET drain and PHASE. If this occurs and the input power supply is present and active, the system could see potentially damaging current. Worst-case leakage currents are on the order of pico-amps; therefore, a 10k resistor, connected from UGATE to PHASE, is more than sufficient to bleed off any stray leakage current. This resistor will not affect the normal performance of the driver or reduce its efficiency. |
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