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HIP6007CB датащи(PDF) 9 Page - Renesas Technology Corp |
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HIP6007CB датащи(HTML) 9 Page - Renesas Technology Corp |
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9 / 10 page ![]() FN4307 Rev.1.00 Page 9 of 10 September 1997 HIP6007 Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com For additional products, see www.intersil.com/en/products.html © Copyright Intersil Americas LLC 1997-2002. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. Figure 9 shows the upper gate drive (BOOT pin) supplied by a bootstrap circuit from VCC. The boot capacitor, CBOOT develops a floating supply voltage referenced to the PHASE pin. This supply is refreshed each cycle to a voltage of VCC less the boot diode drop (VD) when the lower MOSFET, Q2 turns on. A logic-level MOSFET can only be used for Q1 if the MOSFET’s absolute gate-to-source voltage rating exceeds the maximum voltage applied to VCC. Figure 10 shows the upper gate drive supplied by a direct connection to VCC. This option should only be used in converter systems where the main input voltage is +5VDC or less. The peak upper gate-to-source voltage is approximately VCC less the input supply. For +5V main power and +12VDC for the bias, the gate-to-source voltage of Q1 is 7V. A logic- level MOSFET is a good choice for Q1 and a logic-level MOSFET is a good choice for Q1 under these conditions. Schottky Selection Rectifier D2 conducts when the upper MOSFET Q1 is off. The diode should be a Schottky type for low power losses. The power dissipation in the schottky rectifier is approximated by: In addition to power dissipation, package selection and heatsink requirements are the main design tradeoffs in choosing the schottky rectifier. Since the three factors are interrelated, the selection process is an iterative procedure. The maximum junction temperature of the rectifier must remain below the manufacturer’s specified value, typically 125oC. By using the package thermal resistance specification and the schottky power dissipation equation (shown above), the junction temperature of the rectifier can be estimated. Be sure to use the available airflow and ambient temperature to determine the junction temperature rise. FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION +12V HIP6007 GND UGATE PHASE BOOT VCC +5V OR +12V CBOOT DBOOT Q1 D2 NOTE: VG-S VCC - VD + - VD + - + - FIGURE 10. UPPER GATE DRIVE - DIRECT VCC DRIVE OPTION +12V HIP6007 GND UGATE PHASE BOOT VCC +5V OR LESS NOTE: VG-S VCC - 5V Q1 D2 PCOND = IO x Vf x (1 - D) Where: D is the duty cycle = VO/VIN, and Vf is the schottky forward voltage drop |
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