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HIP6007CB датащи(PDF) 8 Page - Renesas Technology Corp |
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HIP6007CB датащи(HTML) 8 Page - Renesas Technology Corp |
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8 / 10 page ![]() HIP6007 FN4307 Rev.1.00 Page 8 of 10 September 1997 most cases, multiple electrolytic capacitors of small case size perform better than a single large case capacitor. Output Inductor Selection The output inductor is selected to meet the output voltage ripple requirements and minimize the converter’s response time to the load transient. The inductor value determines the converter’s ripple current and the ripple voltage is a function of the ripple current. The ripple voltage and current are approximated by the following equations: Increasing the value of inductance reduces the ripple current and voltage. However, the large inductance values reduce the converter’s response time to a load transient. One of the parameters limiting the converter’s response to a load transient is the time required to change the inductor current. Given a sufficiently fast control loop design, the HIP6007 will provide either 0% or 100% duty cycle in response to a load transient. The response time is the time required to slew the inductor current from an initial current value to the transient current level. During this interval the difference between the inductor current and the transient current level must be supplied by the output capacitor. Minimizing the response time can minimize the output capacitance required. The response time to a transient is different for the application of load and the removal of load. The following equations give the approximate response time interval for application and removal of a transient load: where: ITRAN is the transient load current step, tRISE is the response time to the application of load, and tFALL is the response time to the removal of load. With a +5V input source, the worst case response time can be either at the application or removal of load and dependent upon the output voltage setting. Be sure to check both of these equations at the minimum and maximum output levels for the worst case response time. Input Capacitor Selection Use a mix of input bypass capacitors to control the voltage overshoot across the MOSFETs. Use small ceramic capacitors for high frequency decoupling and bulk capacitors to supply the current needed each time Q1 turns on. Place the small ceramic capacitors physically close to the MOSFETs and between the drain of Q1 and the anode of Schottky diode D2. The important parameters for the bulk input capacitor are the voltage rating and the RMS current rating. For reliable operation, select the bulk capacitor with voltage and current ratings above the maximum input voltage and largest RMS current required by the circuit. The capacitor voltage rating should be at least 1.25 times greater than the maximum input voltage and a voltage rating of 1.5 times is a conservative guideline. The RMS current rating requirement for the input capacitor of a buck regulator is approximately 1/2 the DC load current. For a through hole design, several electrolytic capacitors (Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX or equivalent) may be needed. For surface mount designs, solid tantalum capacitors can be used, but caution must be exercised with regard to the capacitor surge current rating. These capacitors must be capable of handling the surge- current at power-up. The TPS series available from AVX, and the 593D series from Sprague are both surge current tested. MOSFET Selection/Considerations The HIP6007 requires an N-Channel power MOSFET. It should be selected based upon rDS(ON), gate supply requirements, and thermal management requirements. In high-current applications, the MOSFET power dissipation, package selection and heatsink are the dominant design factors. The power dissipation includes two loss components; conduction loss and switching loss. The conduction losses are the largest component of power dissipation for the MOSFET. Switching losses also contribute to the overall MOSFET power loss (see the equations below). These equations assume linear voltage-current transitions and are approximations. The gate-charge losses are dissipated by the HIP6007 and don't heat the MOSFET. However, large gate- charge increases the switching interval, tSW, which increases the upper MOSFET switching losses. Ensure that the MOSFET is within its maximum junction temperature at high ambient temperature by calculating the temperature rise according to package thermal-resistance specifications. A separate heatsink may be necessary depending upon MOSFET power, package type, ambient temperature and air flow. Standard-gate MOSFETs are normally recommended for use with the HIP6007. However, logic-level gate MOSFETs can be used under special circumstances. The input voltage, upper gate drive level, and the MOSFET’s absolute gate-to-source voltage rating determine whether logic-level MOSFETs are appropriate. I = VIN - VOUT Fs LO -------------------------------- VOUT VIN ---------------- V OUT = I x ESR tRISE = LO x ITRAN VIN - VO tFALL = LO x ITRAN VO PCOND = IO2 x rDS(ON) x D PSW = 1 2 IO x VIN x tSW x Fs Where: D is the duty cycle = VO / VIN, tSW is the switching interval, and Fs is the switching frequency. |
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