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HIP6007CB датащи(PDF) 8 Page - Renesas Technology Corp

номер детали HIP6007CB
подробное описание детали  Buck Pulse-Width Modulator (PWM) Controller
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
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HIP6007CB датащи(HTML) 8 Page - Renesas Technology Corp

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HIP6007
FN4307 Rev.1.00
Page 8 of 10
September 1997
most cases, multiple electrolytic capacitors of small case size
perform better than a single large case capacitor.
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter’s response
time to the load transient. The inductor value determines the
converter’s ripple current and the ripple voltage is a function of
the ripple current. The ripple voltage and current are
approximated by the following equations:
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce the
converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor current.
Given a sufficiently fast control loop design, the HIP6007 will
provide either 0% or 100% duty cycle in response to a load
transient. The response time is the time required to slew the
inductor current from an initial current value to the transient
current level. During this interval the difference between the
inductor current and the transient current level must be supplied
by the output capacitor. Minimizing the response time can
minimize the output capacitance required.
The response time to a transient is different for the application
of load and the removal of load. The following equations give
the approximate response time interval for application and
removal of a transient load:
where: ITRAN is the transient load current step, tRISE is the
response time to the application of load, and tFALL is the
response time to the removal of load. With a +5V input source,
the worst case response time can be either at the application
or removal of load and dependent upon the output voltage
setting. Be sure to check both of these equations at the
minimum and maximum output levels for the worst case
response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic capacitors
for high frequency decoupling and bulk capacitors to supply the
current needed each time Q1 turns on. Place the small ceramic
capacitors physically close to the MOSFETs and between the
drain of Q1 and the anode of Schottky diode D2.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum input
voltage and a voltage rating of 1.5 times is a conservative
guideline. The RMS current rating requirement for the input
capacitor of a buck regulator is approximately 1/2 the DC load
current.
For a through hole design, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX
or equivalent) may be needed. For surface mount designs,
solid tantalum capacitors can be used, but caution must be
exercised with regard to the capacitor surge current rating.
These capacitors must be capable of handling the surge-
current at power-up. The TPS series available from AVX, and
the 593D series from Sprague are both surge current tested.
MOSFET Selection/Considerations
The HIP6007 requires an N-Channel power MOSFET. It should
be selected based upon rDS(ON), gate supply requirements,
and thermal management requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses
are the largest component of power dissipation for the
MOSFET. Switching losses also contribute to the overall
MOSFET power loss (see the equations below). These
equations assume linear voltage-current transitions and are
approximations. The gate-charge losses are dissipated by the
HIP6007 and don't heat the MOSFET. However, large gate-
charge increases the switching interval, tSW, which increases
the upper MOSFET switching losses. Ensure that the
MOSFET is within its maximum junction temperature at high
ambient temperature by calculating the temperature rise
according to package thermal-resistance specifications. A
separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
Standard-gate MOSFETs are normally recommended for use
with the HIP6007. However, logic-level gate MOSFETs can be
used under special circumstances. The input voltage, upper
gate drive level, and the MOSFET’s absolute gate-to-source
voltage rating determine whether logic-level MOSFETs are
appropriate.
I =
VIN - VOUT
Fs LO
--------------------------------
VOUT
VIN
----------------
V
OUT = I x ESR
tRISE =
LO x ITRAN
VIN - VO
tFALL =
LO x ITRAN
VO
PCOND = IO2 x rDS(ON) x D
PSW =
1
2 IO x VIN x tSW x Fs
Where: D is the duty cycle = VO / VIN,
tSW is the switching interval, and
Fs is the switching frequency.



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