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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFS4410 датащи(PDF) 1 Page - International Rectifier |
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IRFS4410 датащи(HTML) 1 Page - International Rectifier |
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1 / 11 page  11/4/04 Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 96902A www.irf.com 1 D2Pak IRFS4410 TO-220AB IRFB4410 TO-262 IRFSL4410 IRFB4410 IRFS4410 IRFSL4410 HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G S D G S D G S D G VDSS 100V RDS(on) typ. 8.0m: max. 10m: ID 96A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.61 RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W RθJA Junction-to-Ambient, TO-220 k ––– 62 RθJA Junction-to-Ambient (PCB Mount) , D 2Pak jk ––– 40 220 See Fig. 14, 15, 16a, 16b 250 19 -55 to + 175 ± 20 1.6 10lb xin (1.1Nxm) 300 Max. 96 c 68 c 380 |
Аналогичный номер детали - IRFS4410 |
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Аналогичное описание - IRFS4410 |
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ссылки URL |
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