IRFS4410 datasheet(2/11 Pages) IRF

2 / 11 page

IRFB4410/IRFS4410/IRFSL4410

www.irf.com

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Package limitation current is 75A.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.14mH

RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use

above this value.

ISD ≤ 58A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended

footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

––– 0.094 –––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

8.0

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

Gate-to-Source Reverse Leakage

–––

-200

Gate Input Resistance

–––

1.5

–––

Ω

f = 1MHz, open drain

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

120

–––

Total Gate Charge

–––

120

180

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

Ciss

Input Capacitance

–––

5150

–––

Coss

Output Capacitance

–––

360

–––

Crss

Reverse Transfer Capacitance

–––

190

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) –––

420

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)h –––

500

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

(Body Diode)

ISM

Pulsed Source Current

–––

380

(Body Diode)

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 85V,

–––

TJ = 125°C

IF = 58A

Qrr

Reverse Recovery Charge

–––

nC TJ = 25°C

di/dt = 100A/µs

–––

110

170

TJ = 125°C

IRRM

Reverse Recovery Current

–––

2.8

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 50V, ID = 58A

ID = 58A

VGS = 20V

VGS = -20V

MOSFET symbol

showing the

VDS = 80V

Conditions

VGS = 10V

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 80V

i, See Fig.11

VGS = 0V, VDS = 0V to 80V

h, See Fig. 5

TJ = 25°C, IS = 58A, VGS = 0V

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 58A

VDS = VGS, ID = 150µA

VDS = 100V, VGS = 0V

VDS = 100V, VGS = 0V, TJ = 125°C

ID = 58A

RG = 4.1Ω

VGS = 10V

VDD = 65V

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