AM29PDLI27H datasheet(14/68 Pages) SPANSION

14 / 68 page

Am29PDL127H

June 30, 2003

ADV ANCE

I N FO RMAT I O N

cess has access time of t

ACC or tCE. Here again, CE#

selects the device and OE# is the output control and

should be used to gate data to the output inputs if the

device is selected. Fast page mode accesses are ob-

tained by keeping A22–A3 constant and changing

A2–A0 to select the specific word within that page.

Table 2.

Page Select

Simultaneous Operation

In addition to the conventional features (read, pro-

gram, erase-suspend read, and erase-suspend pro-

gram), the device is capable of reading data from one

bank of memory while a program or erase operation is

in progress in another bank of memory (simultaneous

operation). The bank can be selected by bank ad-

dresses (A22–A20) with zero latency.

The simultaneous operation can execute multi-func-

tion mode in the same bank.

Table 3.

Bank Select

Writing Commands/Command Sequences

To write a command or command sequence (which in-

cludes programming data to the device and erasing

sectors of memory), the system must drive WE# and

CE# to V

IL, and OE# to VIH.

The device features an Unlock Bypass mode to facil-

itate faster programming. Once a bank enters the Un-

lock Bypass mode, only two write cycles are required

to program a word, instead of four. The “Word Pro-

gram Command Sequence” section has details on

programming data to the device using both standard

and Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sec-

tors, or the entire device. Table 4 indicates the address

space that each sector occupies. A “bank address” is

the address bits required to uniquely select a bank.

Similarly, a “sector address” refers to the address bits

required to uniquely select a sector. The “Command

Definitions” section has details on erasing a sector or

the entire chip, or suspending/resuming the erase op-

eration.

CC2 in the DC Characteristics table represents the ac-

tive current specification for the write mode. The AC

Characteristics section contains timing specification

tables and timing diagrams for write operations.

Accelerated Program Operation

The device offers accelerated program operations

through the ACC function. This function is primarily in-

tended to allow faster manufacturing throughput at the

factory.

If the system asserts V

HH on this pin, the device auto-

matically enters the aforementioned Unlock Bypass

mode, temporarily unprotects any protected sectors,

and uses the higher voltage on the pin to reduce the

time required for program operations. The system

would use a two-cycle program command sequence

as required by the Unlock Bypass mode. Removing

HH from the WP#/ACC pin returns the device to nor-

mal operation. Note that V

HH must not be asserted on

WP#/ACC for operations other than accelerated pro-

gramming, or device damage may result. In addition,

the WP#/ACC pin should be raised to V

CC when not in

use. That is, the WP#/ACC pin should not be left float-

ing or unconnected; inconsistent behavior of the de-

vice may result.

Autoselect Functions

If the system writes the autoselect command se-

quence, the device enters the autoselect mode. The

system can then read autoselect codes from the inter-

nal register (which is separate from the memory array)

on DQ15–DQ0. Standard read cycle timings apply in

this mode. Refer to the Autoselect Mode and Autose-

lect Command Sequence sections for more informa-

tion.

Standby Mode

When the system is not reading or writing to the de-

vice, it can place the device in the standby mode. In

this mode, current consumption is greatly reduced,

and the outputs are placed in the high impedance

state, independent of the OE# input.

The device enters the CMOS standby mode when the

CE# and RESET# pins are both held at V

IO ± 0.3 V.

Word

Word 0

000

Word 1

001

Word 2

010

Word 3

011

Word 4

100

Word 5

101

Word 6

110

Word 7

111

Bank

A22–A20

Bank A

000

Bank B

001, 010, 011

Bank C

100, 101, 110

Bank D

111

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