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ISL6535CBZ датащи(PDF) 2 Page - Renesas Technology Corp

номер детали ISL6535CBZ
подробное описание детали  Synchronous Buck Pulse-Width Modulator (PWM) Controller
PDF  15 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL6535CBZ датащи(HTML) 2 Page - Renesas Technology Corp

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ISL6535
FN9255 Rev 3.00
Page 2 of 15
March 3, 2016
Pin Descriptions
PIN #
SOIC
PIN #
QFN
PIN NAME
DESCRIPTION
1
14
RT
This pin provides oscillator switching frequency adjustment. By placing a resistor (RRT) from
this pin to GND, the switching frequency is set from between 200kHz and 1.5MHz according
Equation 1:
Alternately ISL6535’s switching frequency can be lowered from 200kHz to 50kHz by
connecting the RT pin with a resistor to VCC according to Equation 2:
2
15
OCSET
The current limit is programmed by connecting this pin with a resistor and capacitor to the
drain of the high-side MOSEFT. A 200µA current source develops a voltage across the
resistor, which is then compared with the voltage developed across the high-side MOSFET. A
blanking period of 120ns is provided for noise immunity.
3
1
SS
Connect a capacitor from this pin to ground. This capacitor, along with an internal 30µA
current source, sets the soft-start interval of the converter.
4
2
COMP
COMP and FB are the available external pins of the error amplifier. The FB pin is the inverting
input of the error amplifier and the COMP pin is the error amplifier output. These pins are
used to compensate the voltage-control feedback loop of the converter.
53
FB
6
4
EN
This pin is a TTL compatible input. Pull this pin below 0.8V to disable the converter. In
shutdown the soft-start pin is discharged and the UGATE and LGATE pins are held low.
7
6
GND
Signal ground for the IC. All voltage levels are measured with respect to this pin.
8
7
PHASE
This pin connects to the source of the high-side MOSFET and the drain of the low-side
MOSFET. This pin represents the return path for the high-side gate driver. During normal
switching, this pin is used for high-side current sensing.
9
8
UGATE
Connect UGATE to the upper MOSFET gate. This pin provides the gate drive for the upper
MOSFET.
10
9
BOOT
This pin provides bias to the upper MOSFET driver. A bootstrap circuit may be used to create
a BOOT voltage suitable to drive a standard N-channel MOSFET.
11
10
PGND
This is the power ground connection. Tie the lower MOSFET source and board ground to this
pin.
12
11
LGATE
Connect LGATE to the lower MOSFET gate. This pin provides the gate drive for the lower
MOSFET.
13
12
PVCC
Provide a 12V ±10% bias supply for the lower gate drive to this pin. This pin should be
bypassed with a capacitor to PGND.
14
13
VCC
Provide a 12V bias supply for the chip to this pin. The pin should be bypassed with a capacitor
to GND.
-
5
REFIN
Upon enable if REFIN is less than 2.2V, the external reference pin is used as the control
reference instead of the internal 0.597V reference. An internal 6µA pull-up to 5V is provided
for disabling this functionality.
-
16
SSDONE
Provides an open-drain signal at the end of soft-start.
-
PAD
EPAD
The exposed pad is at GND potential, but does not conduct current; the GND and PGND pins
must be used for bias current. The pad should be tied to a GND plane with as many thermal
vias as possible, for optimal thermal performance.
RRT k

6500
Fs kHz
 200 kHz

------------------------------------------------------- 1.3k
(RRT to GND)
(EQ. 1)
RRT k

55000
200 kHz
 F
s kHz

------------------------------------------------------- 70k
+
(RRT to VCC)
(EQ. 2)



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