GaAs, pHEMT, MMIC, Power Amplifier,

2 GHz to 50 GHz

Data Sheet

HMC1126

Rev. C

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FEATURES

Output power for 1 dB compression (P1dB): 17.5 dB typical

Gain: 11 dB typical

Output third-order intercept (IP3): 28 dBm typical

Supply voltage: 5 V at 65 mA

50 Ω matched input/output

Die size: 2.3 mm × 1.45 mm × 0.05 mm

APPLICATIONS

Test instrumentation

Microwave radios and VSATs

Military and space

Telecommunications infrastructure

Fiber optics

FUNCTIONAL BLOCK DIAGRAM

3

4

5

1

2

RFOUT

RFIN

HMC1126

Figure 1.

GENERAL DESCRIPTION

The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transfer (pHEMT), monolithic microwave

integrated circuit (MMIC), distributed power amplifier that

operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB

of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB

gain compression, while requiring 65 mA from a 5 V supply.

The HMC1126 amplifier inputs/outputs are internally matched

to 50 Ω facilitating integration into multichip modules (MCMs).

All data is taken with the chip connected via two 0.025 mm (1 mil)

wire bonds of minimal length 0.31 mm (12 mils).