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HMC1126 датащи(PDF) 5 Page - Analog Devices |
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HMC1126 датащи(HTML) 5 Page - Analog Devices |
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5 / 16 page ![]() Data Sheet HMC1126 Rev. C | Page 5 of 16 ABSOLUTE MAXIMUM RATINGS Table 5. Parameter Rating Drain Bias Voltage (VDD) 8.5 V Gate Bias Voltage VGG1 −3 V to 0 V VGG2 For VDD = 8 V1 3.6 V For VDD = 7 V 3.0 V For VDD = 6 V >2.0 V For VDD = 4 V to 5 V >1.2 V RF Input Power (RFIN) 22 dBm Channel Temperature 175°C Continuous Power Dissipation, PDISS (TA = 85°C, Derate 21.3 mW/°C at 85°C) 1.915 W Thermal Resistance, RTH (Channel to Bottom of Die) 47°C/W2 Storage Temperature −65°C to +150°C Operating Temperature −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) Class 1A, passed 250 V Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION 1 IDD < 105 mA. 2 Based upon a thermal epoxy of 20 W/°C. |
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