IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106

5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796

5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 10 V; I

45

60

S

C

iss

6000

pF

C

oss

V

1010

pF

C

rss

400

pF

t

d(on)

24

ns

t

r

V

25

ns

t

d(off)

R

88

ns

t

f

20

ns

Q

G(on)

240

nC

Q

GS

V

42

nC

Q

GD

110

nC

R

thJC

0.23 K/W

R

thCK

0.15

K/W

Source-Drain Diode

Ratings and Characteristics

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

75

A

I

SM

Repetitive; pulse width limited by T

JM

300

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

360

ns

Q

rr

4

µC

IXTK 75N30

TO-264 AA Outline

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.82

5.13

.190

.202

A1

2.54

2.89

.100

.114

A2

2.00

2.10

.079

.083

b

1.12

1.42

.044

.056

b1

2.39

2.69

.094

.106

b2

2.90

3.09

.114

.122

c

0.53

0.83

.021

.033

D

25.91

26.16

1.020

1.030

E

19.81

19.96

.780

.786

e

5.46 BSC

.215 BSC

J

0.00

0.25

.000

.010

K

0.00

0.25

.000

.010

L

20.32

20.83

.800

.820

L1

2.29

2.59

.090

.102

P

3.17

3.66

.125

.144

Q

6.07

6.27

.239

.247

Q1

8.38

8.69

.330

.342

R

3.81

4.32

.150

.170

R1

1.78

2.29

.070

.090

S

6.04

6.30

.238

.248

T

1.57

1.83

.062

.072

Dim.