IXTK75N30 datasheet(1/4 Pages) IXYS

номер детали	IXTK75N30

подробное описание детали	N-Channel Enhancement Mode

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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Advance Technical Information

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 1 mA

300

V

GS(th)

V

DS

= V

GS, ID = 250 µA

2.0

4.0

V

I

GSS

V

GS

= ±20 V DC, V

DS = 0

±100

nA

I

DSS

V

DS

= V

DSS

T

J = 25°C

50

µA

V

GS

= 0 V

T

J = 125°C

2

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

42 m

Ω

Pulse test, t

≤ 300 ms, duty cycle d ≤ 2%

Features

•Low R

DS (on) HDMOS

TM process

•Ruggedpolysilicongatecellstructure

•Internationalstandardpackage

•Fastswitchingtimes

Applications

• Motorcontrols

• DC choppers

• Switched-mode power supplies

Advantages

• Easy to mount with one screw

(isolated mounting screw hole)

• Space savings

• High power density

DS99012(03/03)

High Current

MegaMOSTMFET

N-Channel Enhancement Mode

Symbol

Test conditions

Maximum ratings

V

DSS

T

J

= 25°C to 150°C

300

V

DGR

T

J

= 25°C to 150°C; R

GS = 1.0 MΩ

300

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C75

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

300

A

I

AR

T

C

= 25

°C75

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C

2.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

540

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M

d

Mounting torque

0.7/6

Nm/lb.in.

Weight

TO-264

10

g

TO-264 AA (IXTK)

S

G

D

D (TAB)

G = Gate

D

= Drain

S = Source

Tab = Drain

IXTK 75N30

V

DSS

= 300

V

I

D25

=

75

A

R

DS(on)

=

42 m

Ω

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