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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT8613 датащи(PDF) 3 Page - Linear Technology |
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LT8613 датащи(HTML) 3 Page - Linear Technology |
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3 / 24 page  For more information www.linear.com/LT8613 LT8613 3 8613f elecTrical characTerisTics Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LT8613E is guaranteed to meet performance specifications from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The LT8613I is guaranteed over the full –40°C to 125°C operating junction The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS Minimum On-Time ILOAD = 2A, SYNC = 0V ILOAD = 2A, SYNC = 3.3V l l 20 20 40 35 60 55 ns ns Minimum Off-Time 50 85 120 ns Oscillator Frequency RT = 221k, ILOAD = 1.5A RT = 60.4k, ILOAD = 1.5A RT = 18.2k, ILOAD = 1.5A l l l 180 665 1.85 210 700 2.00 240 735 2.15 kHz kHz MHz Top Power NMOS On-Resistance ISW = 1A 65 mΩ Top Power NMOS Current Limit l 7.5 9.7 12.0 A Bottom Power NMOS On-Resistance VINTVCC = 3.4V, ISW = 1A 29 mΩ Valley Current Limit VINTVCC = 3.4V l 6 10 12 A SW Leakage Current VIN = 42V, VSW = 0V, 42V –10 0.1 10 µA EN/UV Pin Threshold EN/UV Rising l 0.94 1.0 1.06 V EN/UV Pin Hysteresis 40 mV EN/UV Pin Current VEN/UV = 2V –20 1 20 nA PG Upper Threshold Offset from VFB VFB Falling l 6.5 9.0 11.5 % PG Lower Threshold Offset from VFB VFB Rising l –6.5 –9.0 –11.5 % PG Hysteresis 1.3 % PG Leakage VPG = 3.3V –40 40 nA PG Pull-Down Resistance VPG = 0.1V l 680 2000 Ω SYNC Threshold SYNC Falling SYNC Rising 0.7 1.0 1.0 1.3 1.4 1.55 V V SYNC Pin Current VSYNC = 2V –100 100 nA TR/SS Source Current l 1.4 2.1 2.7 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 230 Ω Current Sense Voltage (VISP-ISN) VICTRL = 1.5V, VISN = 3.3V VICTRL = 1.5V, VISN = 0V VICTRL = 800mV, VISN = 3.3V VICTRL = 800mV, VISN = 0V VICTRL = 200mV, VISN = 3.3V VICTRL = 200mV, VISN = 0V l l l l l l 48 46 38 37 5 4 50 50.5 41 42 10 10.5 52 56 46 47 15 17 mV mV mV mV mV mV IMON Monitor Pin Voltage VISP-ISN = 50mV, VISN = 3.3V VISP-ISN = 50mV, VISN = 0V VISP-ISN = 10mV, VISN = 3.3V VISP-ISN = 10mV, VISN = 0V l l l l 0.960 0.890 130 110 1.00 0.99 220 205 1.040 1.09 320 300 V V mV mV ISP, ISN Pin Bias Current l –20 20 µA temperature range. High junction temperatures degrade operating lifetimes. Operating lifetime is derated at junction temperatures greater than 125°C. Note 3: This IC includes overtemperature protection that is intended to protect the device during overload conditions. Junction temperature will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime. |
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