K4M51163LE - Y(P)C/L/F

February 2004

Mobile-SDRAM

DC OPERATING CONDITIONS

Pin

Symbol

Min

Max

Unit

Note

Clock

3.0

12.0

pF

RAS, CAS, WE, CS, CKE

3.0

12.0

pF

DQM

1.5

6.0

pF

Address

3.0

12.0

pF

3.0

6.5

pF

ABSOLUTE MAXIMUM RATINGS

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Parameter

Symbol

Value

Unit

-1.0 ~ 4.6

V

-1.0 ~ 4.6

V

Storage temperature

-55 ~ +150

°C

Power dissipation

1.0

W

Short circuit current

50

mA

°C)

NOTES :

1. Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products.

Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V).

2. VIH (max) = 3.0V AC.The overshoot voltage duration is

≤ 3ns.

3. VIL (min) = -1.0V AC. The undershoot voltage duration is

≤ 3ns.

4. Any input 0V

≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

5. Dout is disabled, 0V

≤ VOUT ≤ VDDQ.

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

2.3

2.5

2.7

V

2.3

2.5

2.7

V

1.65

-

2.7

V

1

Input logic high voltage

-

V

2

Input logic low voltage

-0.3

0

0.3

V

3

Output logic high voltage

-

-

V

Output logic low voltage

-

-

0.2

V

Input leakage current

-10

-

10

uA

4