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HF01B00 датащи(PDF) 4 Page - Monolithic Power Systems

номер детали HF01B00
подробное описание детали  Off Line High Voltage Quasi Resonant Regulator
PDF  16 Pages
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производитель  MPS [Monolithic Power Systems]
домашняя страница  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

HF01B00 датащи(HTML) 4 Page - Monolithic Power Systems

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HF01B00/01/02/03/04
–OFF LINE HIGH VOLTAGE QUASI RESONANT REGULATOR
HF01B00/01/02/03/04 Rev. 1.2
www.MonolithicPower.com
4
4/9/2013
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2013 MPS. All Rights Reserved.
ELECTRICAL CHARACTERISTICS
VCC =12V, TA=+25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Start-up Current Source (Pin D)
Supply current from Pin D
Icharge
VCC =6V;
VD=400V
1.4
2
2.6
mA
Leakage current from Pin D
Ileak
VCC =13V;
VD=400V
20
μA
Break Down Voltage
V(BR)DSS
700
--
V
On-State Resistance
HF01B00
RDS(ON)
VCC =10V;
ID=100mA
1.9
Ω
HF01B01
3.3
HF01B02
5.5
HF01B03
7.7
HF01B04
11
Supply Voltage Management (Pin Vcc)
VCC Upper Level at which the Internal
High Voltage Current Source Stops
VCCH
10.6
11.8
13
V
VCC Lower Level at which the Internal
High Voltage Current Source Triggers
VCCL
7.2
8
8.8
V
VCC Decreasing Level at which the
Latchoff Phase Ends
Vcclatch
5.5
V
Internal IC Consumption, Latchoff Phase
ILatch
VCC =6.0V
400
μA
Feedback Management (Pin FB)
Internal Pull Up Resistor
RFB
10
kΩ
Internal Pull Up Voltage
Vup
4.5
V
Pin8 to Current Set point Division Ratio
Idiv
3.3
Internal Soft-Start Time
Tss
2.4
ms
FB Decreasing Level at which the
Regulator enter the Burst Mode
VBURL
0.5
V
FB Increasing Level at which the
Regulator leave the Burst Mode
VBURH
0.7
V
Over Load Set Point
VOLP
3.7
V
Valley Switching Detector (Pin VSD)
Valley Point Detection Threshold Voltage
VVSD
30
45
60
mV
Valley Point Detection Hysteresis
Vhys
10
mV
Pin VSD Clamp Voltage
VVSDH
High
State
Ipin=3.0mA
7
7.8
8.6
V
VVSDL
Low State
Ipin=-2.0mA
-0.8
-0.65
-0.5
V
Valley Point Detection Delay
TVSD
Pull down from
2V to -100mV
90
150
210
ns
Parasitical Capacitance at Pin VSD
Cpar
10
pF
Minimum Off Time
Tmin
6.6
7.8
9
μs
Re-start time After Last Valley Point
Detection Transition
Trestart
4.6
μs
OVP Sampling Delay
TOVPS
3.5
μs
Pin VSD OVP reference level
VOVP
6
V
Internal Impedance
Rint
24
kΩ
Current Sampling Management (Pin S)
Leading Edge Blanking
TLEB
320
ns
Maximum current set-point
VCS
1
V



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