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HF01B00 датащи(PDF) 4 Page - Monolithic Power Systems |
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HF01B00 датащи(HTML) 4 Page - Monolithic Power Systems |
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4 / 16 page ![]() HF01B00/01/02/03/04 –OFF LINE HIGH VOLTAGE QUASI RESONANT REGULATOR HF01B00/01/02/03/04 Rev. 1.2 www.MonolithicPower.com 4 4/9/2013 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2013 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VCC =12V, TA=+25℃, unless otherwise noted Parameter Symbol Conditions Min Typ Max Unit Start-up Current Source (Pin D) Supply current from Pin D Icharge VCC =6V; VD=400V 1.4 2 2.6 mA Leakage current from Pin D Ileak VCC =13V; VD=400V 20 μA Break Down Voltage V(BR)DSS 700 -- V On-State Resistance HF01B00 RDS(ON) VCC =10V; ID=100mA 1.9 Ω HF01B01 3.3 HF01B02 5.5 HF01B03 7.7 HF01B04 11 Supply Voltage Management (Pin Vcc) VCC Upper Level at which the Internal High Voltage Current Source Stops VCCH 10.6 11.8 13 V VCC Lower Level at which the Internal High Voltage Current Source Triggers VCCL 7.2 8 8.8 V VCC Decreasing Level at which the Latchoff Phase Ends Vcclatch 5.5 V Internal IC Consumption, Latchoff Phase ILatch VCC =6.0V 400 μA Feedback Management (Pin FB) Internal Pull Up Resistor RFB 10 kΩ Internal Pull Up Voltage Vup 4.5 V Pin8 to Current Set point Division Ratio Idiv 3.3 Internal Soft-Start Time Tss 2.4 ms FB Decreasing Level at which the Regulator enter the Burst Mode VBURL 0.5 V FB Increasing Level at which the Regulator leave the Burst Mode VBURH 0.7 V Over Load Set Point VOLP 3.7 V Valley Switching Detector (Pin VSD) Valley Point Detection Threshold Voltage VVSD 30 45 60 mV Valley Point Detection Hysteresis Vhys 10 mV Pin VSD Clamp Voltage VVSDH High State Ipin=3.0mA 7 7.8 8.6 V VVSDL Low State Ipin=-2.0mA -0.8 -0.65 -0.5 V Valley Point Detection Delay TVSD Pull down from 2V to -100mV 90 150 210 ns Parasitical Capacitance at Pin VSD Cpar 10 pF Minimum Off Time Tmin 6.6 7.8 9 μs Re-start time After Last Valley Point Detection Transition Trestart 4.6 μs OVP Sampling Delay TOVPS 3.5 μs Pin VSD OVP reference level VOVP 6 V Internal Impedance Rint 24 kΩ Current Sampling Management (Pin S) Leading Edge Blanking TLEB 320 ns Maximum current set-point VCS 1 V |
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