| поискавой системы для электроныых деталей |
|
IRFB3306 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IRFB3306 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFB3306,IIRFB3306 · FEATURES · Static drain-source on-resistance: RDS(on) ≤4.2mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRIPTION · High efficiency synchronous rectification in SMPS · Uninterrruptible power supply · High speed power switching · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pulsed 620 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.65 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
Аналогичный номер детали - IRFB3306 |
|
Аналогичное описание - IRFB3306 |
|
|
|
ссылки URL |
| Конфиденциальность |
| ALLDATASHEETRU.COM |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |