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SIT2018B датащи(PDF) 1 Page - SiTime Corp. |
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SIT2018B датащи(HTML) 1 Page - SiTime Corp. |
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1 / 17 page ![]() The Smart Timing Choice The Smart Timing Choice SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.0 Revised May 14, 2015 SiT2018B High Temp, Single-Chip, One-Output Clock Generator Features Applications Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places Industrial, medical, automotive, avionics and other high temper- ature applications Operating temperature from -40°C to 125°C. For -55°C option, refer to SiT2020 and SiT2021 Industrial sensors, PLC, motor servo, outdoor networking equipment, medical video cam, asset tracking systems, etc. Supply voltage of 1.8V or 2.5V to 3.3V Excellent total frequency stability as low as ±20 ppm Low power consumption of 3.5 mA typical at 1.8V LVCMOS/LVTTL compatible output 5-pin SOT23-5 package: 2.9mm x 2.8mm RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free For AEC-Q100 clock generators, refer to SiT2024 and SiT2025 Electrical Specifications Table 1. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 – 110 MHz Refer to Table 14 for the exact list of supported frequencies list of supported frequencies Frequency Stability and Aging Frequency Stability F_stab -20 – +20 ppm Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load (15 pF ± 10%). -25 – +25 ppm -30 – +30 ppm -50 – +50 ppm Operating Temperature Range Operating Temperature Range (ambient) T_use -40 – +105 °C Extended Industrial -40 – +125 °C Automotive Supply Voltage and Current Consumption Supply Voltage Vdd 1.62 1.8 1.98 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – 3.63 V Current Consumption Idd – 3.8 4.7 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V – 3.6 4.5 mA No load condition, f = 20 MHz, Vdd = 2.5V – 3.5 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V OE Disable Current I_od – – 4.5 mA Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state. – – 4.3 mA Vdd = 1.8V, OE = Low, Output in high Z state. Standby Current I_std – 2.6 8.5 A Vdd = 2.8V to 3.3V, ST = Low, Output is weakly pulled down –1.4 5.5 A Vdd = 2.5V, ST = Low, Output is weakly pulled down –0.6 4.0 A Vdd = 1.8V, ST = Low, Output is weakly pulled down LVCMOS Output Characteristics Duty Cycle DC 45 – 55 % All Vdds Rise/Fall Time Tr, Tf – 1.0 2.0 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% – 1.3 2.5 ns Vdd =1.8V, 20% - 80% – 1.0 3 ns Vdd = 2.25V - 3.63V, 20% - 80% Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V or 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V or 2.5V) IOL = 2 mA (Vdd = 1.8V) |
Аналогичный номер детали - SIT2018B |
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Аналогичное описание - SIT2018B |
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