ZXTP2008Z

Document number: DS33709 Rev. 2 - 2

2 of 7

www.diodes.com

July 2017

© Diodes Incorporated

ZXTP2008Z

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-30

V

Emitter-Base Voltage

-7

V

Continuous Collector Current

-5.5

A

Peak Pulse Current

-20

A

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 5)

1.5

12

W

mW/°C

(Note 6)

2.1

16.8

Thermal Resistance, Junction to Ambient

(Note 5)

83

°C/W



(Note 6)

60

Thermal Resistance, Junction to Lead

(Note 7)

3.23

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge

– Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge

– Machine Model

ESD MM

400

V

C

Notes:

5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air

conditions whilst operating in steady-state.

6. Same as Note 5, except the device is mounted on 50mm x 50mm 1oz copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.