ZXTP2008Z datasheet(4/7 Pages) DIODES

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ZXTP2008Z

Document number: DS33709 Rev. 2 - 2

4 of 7

www.diodes.com

July 2017

ZXTP2008Z

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-50

-70

—

IC = -100µA

Collector-Emitter Breakdown Voltage

BVCER

-50

-70

—

IC = -1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-30

-40

—

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8

—

IE = -100µA

Collector Cutoff Current

ICBO

—



< -1

—



-20

-0.5

µA

VCB = -40V

VCB = -40V, TA = +100°C

Collector Cutoff Current

ICER

—



< -1

—



-20

-0.5

µA

VCB = -40V, R≤1kΩ

VCB = -40V, TA = +100°C, R≤1kΩ

Emitter Cutoff Current

IEBO

—

< -1

-10

VEB = -6V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—



-25

-35

-55

-130

-40

-55

-80

-175

IC = -0.5A, IB = -20mA

IC = -1A, IB = -100mA

IC = -1A, IB = -20mA

IC = -2A, IB = -200mA

IC = -5.5A, IB = -500mA

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—



-970

-1070

IC = -5.5A, IB = -500mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—



-860

-960

IC = -5.5A, VCE = -1V

DC Current Gain (Note 9)

hFE

100

225

200

145

300

—

IC = -10mA, VCE = -1V

IC = -1A, VCE = -1V

IC = -5A, VCE = -1V

IC = -20A, VCE = -1V

Transition Frequency

—

110

—

MHz

VCE = -10V, IC = -100mA,

f = 50MHz

Output Capacitance (Note 9)

COBO

—

VCB = -10V, f = 1MHz

Switching Times

tON

—

VCC = -10V, IC = -1A,

IB1 = -IB2 = 100mA

tOFF

—

230

—

Note:

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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