ZXMP6A17G

SEMICO NDUC TORS

ISSUE 1 - MAY 2005

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

-60

V

I

Zero Gate Voltage Drain Current

I

DSS

-1

AV

Gate-Body Leakage

I

GSS

100

nA

V

20V, V

Gate-Source Threshold Voltage

V

GS(th)

-1.0

V

I

D

=-250 A, V

Static Drain-Source On-State

Resistance

(1)

R

DS(on)

0.125

0.190

V

V

Forward Transconductance

(1)(3)

g

fs

4.7

S

V

DYNAMIC

(3)

Input Capacitance

C

iss

637

pF

V

f=1MHz

Output Capacitance

C

oss

70

pF

Reverse Transfer Capacitance

C

rss

53

pF

SWITCHING

(2) (3)

Turn-On Delay Time

t

d(on)

2.6

ns

V

R

G

6.0

, V

Rise Time

t

r

3.4

ns

Turn-Off Delay Time

t

d(off)

26.2

ns

Fall Time

t

f

11.3

ns

Gate Charge

Q

g

9.8

nC

V

Total Gate Charge

Q

g

17.7

nC

V

Gate-Source Charge

Q

gs

1.6

nC

Gate-Drain Charge

Q

gd

4.4

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

V

SD

-0.85

-0.95

V

T

V

Reverse Recovery Time

(3)

t

rr

25.1

ns

T

di/dt= 100A/ s

Reverse Recovery Charge

(3)

Q

rr

27.2

nC

NOTES

(1) Measured under pulsed conditions. Width

300µ s. Duty cycle

2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.