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ZXMP6A17G датащи(PDF) 2 Page - Zetex Semiconductors |
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ZXMP6A17G датащи(HTML) 2 Page - Zetex Semiconductors |
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2 / 7 page ![]() ZXMP6A17G SEMICO NDUC TORS 2 ISSUE 1 - MAY 2005 PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -60 V Gate-Source Voltage V GS 20 V Continuous Drain Current (V GS= -10V; TA=25°C) (b) (V GS= -10V; TA=70°C) (b) (V GS= -10V; TA=25°C) (a) I D -4.1 -3.3 -3.0 A Pulsed Drain Current (c) I DM -13.7 A Continuous Source Current (Body Diode) (b) I S -4.8 A Pulsed Source Current (Body Diode) (c) I SM -13.7 A Power Dissipation at T A=25°C (a) Linear Derating Factor P D 2.0 16 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor P D 3.9 31 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W Junction to Ambient (b) RθJA 32.2 °C/W THERMAL RESISTANCE NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. |
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