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LP6482S датащи(PDF) 5 Page - Lowpower Semiconductor inc |
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LP6482S датащи(HTML) 5 Page - Lowpower Semiconductor inc |
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5 / 10 page ![]() LP6482S-02 May.-2013 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 10 Preliminary Datasheet LP6482S Electrical Characteristics VIN=12V, VEN=5V, TA=25℃, unless otherwise noted Symbol Parameter Condition Min Typ Max Units VIN Input Voltage 4.5 36 V ∆VOUT Output Voltage Line Regulation ILOAD=1mA to 2000mA 0.3 0.6 %/V ∆VFB Reference Voltage Line Regulation VIN=5V to 30V, VEN=5V 0.25 0.4 %/V VOUT Output Voltage Range 0.923 12 V IQ Quiescent Current VIN=12V 15 mA ISHDN Shutdown Current EN=GND 1 µA ILIM P-Channel Current Limit 3 A RDS(ON)_H High-Side Switch On Resistance 85 mΩ RDS(ON)_L Low-Side Switch On Resistance 80 mΩ ILX_LEAK LX Leakage Current VEN=0V, VSW=0 or 5V, VIN=5V 1 µA VFB Feedback Threshold Voltage Accuracy VIN=12V 0.895 0.923 0.951 V IFB FB Leakage Current VOUT=5.0V 30 nA fOSC Oscillator Frequency 340 KHz tS Startup Time From Enable to Output Regulation 120 µs TSD Over-Temperature Shutdown Threshold 150 ℃ THYS Over-Temperature Shutdown Hysteresis 20 ℃ VEN(L) Enable Threshold Low 0.4 V VEN(H) Enable Threshold High 2.5 6 V IEN Input Low Current VIN=12V, VEN=5V 1 µA Note: Output Voltage: VOUT = VFB × ( 1 + R1 / R2 ) Volts; |
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