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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LP6482S датащи(PDF) 4 Page - Lowpower Semiconductor inc |
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LP6482S датащи(HTML) 4 Page - Lowpower Semiconductor inc |
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4 / 10 page  LP6482S-02 May.-2013 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 10 Preliminary Datasheet LP6482S Absolute Maximum Ratings Note 1 Input Voltage to GND --------------------------------------------------------------------------------------------------------- 36V SW\BS to GND (VSW) ------------------------------------------------------------------------------------ -0.3V to VIN +0.3V FB to GND (VFB) ---------------------------------------------------------------------------------------------------- -0.3V to 6V EN to GND (VEN) ---------------------------------------------------------------------------------------------------- -0.3V to 6V COMP\SS to GND (VEN) ------------------------------------------------------------------------------------------ -0.3V to 6V Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C Storage Temperature ------------------------------------------------------------------------------------------ -65℃ to 165℃ Operating Ambient Temperature Range (TA) -------------------------------------------------------------- -40℃ to 85°C Maximum Soldering Temperature (at leads, 10sec) --------------------------------------------------------------- 260℃ Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Information Maximum Power Dissipation (SOP8, PD,TA=25°C) ----------------------------------------------------------------- 1.5W Thermal Resistance (SOP8, θJA) ------------------------------------------------------------------------------------- 80℃/W Maximum Power Dissipation (ESOP8, PD,TA=25°C) ----------------------------------------------------------------- 2W Thermal Resistance (ESOP8, θJA) ----------------------------------------------------------------------------------- 50℃/W ESD Susceptibility HBM(Human Body Mode) -------------------------------------------------------------------------------------------------- 2KV MM(Machine Mode) --------------------------------------------------------------------------------------------------------- 200V |
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