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MCP73828 датащи(PDF) 13 Page - Microchip Technology |
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MCP73828 датащи(HTML) 13 Page - Microchip Technology |
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13 / 24 page ![]() 2002 Microchip Technology Inc. DS21706A-page 13 MCP73828 VINMIN is the minimum input voltage source IOUT is the maximum peak fast charge current RSENSE is the sense resistor Worst case, VGS with a 5V, +/-10% input voltage source, 100 m Ω, 1% sense resistor, and a maximum sink voltage of 1.6V is: At this worst case VGS, the RDSON of the MOSFET must be low enough as to not impede the performance of the charging system. The maximum allowable RDSON at the worst case VGS is: The Fairchild NDS8434 and International Rectifier IRF7404 both satisfy these requirements. 6.1.1.3 EXTERNAL CAPACITORS The MCP73828 is stable with or without a battery load. In order to maintain good AC stability in the constant voltage mode, a minimum capacitance of 10 µF is rec- ommended to bypass the VBAT pin to GND. This capac- itance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during constant voltage mode. Therefore, the bypass capacitance may be nec- essary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor’s minimum ESR (Effective Series Resistance) value. The actual value of the capacitor and its associated ESR depends on the forward trans conductance, gm, and capacitance of the external pass transistor. A 10 µF tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1 A output current. 6.1.1.4 REVERSE BLOCKING PROTECTION The optional reverse blocking protection diode depicted in Figure 6-1 provides protection from a faulted or shorted input or from a reversed polarity input source. Without the protection diode, a faulted or shorted input would discharge the battery pack through the body diode of the external pass transistor. If a reverse protection diode is incorporated in the design, it should be chosen to handle the peak fast charge current continuously at the maximum ambient temperature. In addition, the reverse leakage current of the diode should be kept as small as possible. 6.1.1.5 SHUTDOWN INTERFACE In the stand-alone configuration, the shutdown pin is generally tied to the input voltage. The MCP73828 will automatically enter a low power mode when the input voltage is less than the output voltage reducing the bat- tery drain current to 10 µA, typically. By connecting the shutdown pin as depicted in Figure 6-1, the battery drain current may be further reduced. In this application, the battery drain current becomes a function of the reverse leakage current of the reverse protection diode. 6.1.1.6 CELL TEMPERATURE MONITOR As discussed in Section 5.1.1, the MCP73828 can monitor a temperature range for –0.5°C to 44.2°C. This temperature range can be expanded or shifted by plac- ing fixed value resistors in series/parallel combinations with the thermistor (see Figure 6-1). Given that the nominal output current of the THERM pin is 25 µA, the resistor values must satisfy the following equations: Where: RS is the fixed series resistance RP is the fixed parallel resistance RTHERMISTOR-H is the NTC thermistor resistance at the upper temperature of interest RTHERMISTOR-C is the NTC thermistor resistance at the lower temperature of interest. For example, by utilizing a 931 Ω resistor in series with the typical NTC thermistor described previously, the monitored temperature window will shift to 0°C to +50°C, typically. Again, with the same thermistor, a 1k Ω series resistor and a 140 kΩ parallel resistor will produce a monitored window of -5°C to +50°C, typi- cally. VGS 1.6V 4.5V 758mA 99m Ω × – () – 2.8 – V == RDSON VINMIN IPEAK RSENSE × – VBATMAX – IOUT ---------------------------------------------------------------------------------------------- = RDSON 4.5V 758mA 99m Ω × – 4.242V – 758mA -------------------------------------------------------------------------------- 242m Ω == RS RP RTHERMISTOR H – × RP RTHERMISTOR H – + -------------------------------------------------------- + 4520 Ω typ () = RS RP RTHERMISTOR C – × RP RTHERMISTOR C – + -------------------------------------------------------- + 33560 Ω typ () = |
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