RN1007

~RN1009

2001-06-07

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN1007

10

47

RN1008

22

47

RN1009

47

22

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1007,RN1008,RN1009

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2007~RN2009

Equivalent Circuit And Bias Resister Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

RN1007

6

RN1008

7

Emitter-base voltage

RN1009

15

V

Collector current

100

mA

Collector power dissipation

400

mW

Junction temperature

150

°C

Storage temperature range

−55~150



°C

JEDEC

TO-92

EIAJ

SC-43

TOSHIBA

2-5F1B

Weight: 0.21g

Unit: mm