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DXTP3C60PS датащи(PDF) 2 Page - Diodes Incorporated

номер детали DXTP3C60PS
подробное описание детали  PNP LOW SAT MEDIUM POWER TRANSISTOR
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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DXTP3C60PS датащи(HTML) 2 Page - Diodes Incorporated

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DXTP3C60PS
Document number: DS39128 Rev.1 - 2
2 of 7
www.diodes.com
July 2017
© Diodes Incorporated
DXTP3C60PS
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Base Current
IB
-1
A
Continuous Collector Current
IC
-3
A
Peak Pulse Collector Current
ICM
-8
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
5
W
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
73
C/W
(Note 6)
30
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
8,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is measured at t
 5 sec.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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