DXTP3C60PS datasheet(4/7 Pages) DIODES

4 / 7 page

DXTP3C60PS

Document number: DS39128 Rev.1 - 2

4 of 7

www.diodes.com

July 2017

DXTP3C60PS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

-60

—

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

-60

—

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

—

IE = -100µA

Collector-Base Cutoff Current

ICBO

—

-100

VCB = -48V

—

-50

µA

VCB = -48V @Tj = 150°C

Emitter Cutoff Current

IEBO

—

100

VEB = -7V

Collector-Emitter Cutoff Current

ICES

—

100

VCES = -48V

ON CHARACTERISTICS (Note 9)

DC Current Gain

hFE

150

250

—

IC = -500mA, VCE = -2V

150

225

—

IC = -1A, VCE = -2V

130

—

IC = -2A, VCE = -2V

—

IC = -3A, VCE = -2V

Collector-Emitter Saturation Voltage

VCE(sat)

—

-100

-225

IC = -1A, IB = -50mA

—

-240

-360

IC = -3A, IB = -300mA

Collector-Emitter Saturation Resistance

RCE(sat)

—

100

225

mΩ

IC = -1A, IB = -50mA

—

120

= -3A, IB = -300mA

Base-Emitter Saturation Voltage

VBE(sat)

—

-0.8

-0.95

IC = -1A, IB = -50mA

—

-1.02

-1.2

IC = -2A, IB = -200mA

Base-Emitter Turn-On Voltage

VBE(on)

—

-0.7

-0.8

IC = -0.5A, VCE = -2V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

—

MHz

VCE = -10V, IC = -500mA, f = 100MHz

Output Capacitance

Cobo

—

VCB = -10V, f = -1MHz

Delay Time

—

VCC = -12.5V, IC = 3A

IB1 = -IB2 = -0.150A

Rise Time

—

220

—

Turn-On Time

t(on)

—

235

—

Storage Time

—

160

—

Fall Time

—

185

—

Turn-Off Time

t(off)

—

345

—

Note:

8. Measured under pulsed conditions. Pulse width

 300μs. Duty cycle  2%.

DXTP3C60PS датащи(PDF) 4 Page - Diodes Incorporated

DXTP3C60PS датащи(HTML) 4 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL