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PDTA114TT датащи(PDF) 5 Page - NXP Semiconductors

номер детали PDTA114TT
подробное описание детали  PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open
PDF  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTA114TT датащи(HTML) 5 Page - NXP Semiconductors

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2004 Aug 02
5
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 10 k
Ω, R2 = open
PDTA114T series
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −50 V; IE =0
−−−100
nA
ICEO
collector-emitter cut-off current
VCE = −30 V; IB =0
−−−1
µA
VCE = −30 V; IB = 0; Tj = 150 °C
−−−50
µA
IEBO
emitter-base cut-off current
VEB = −5 V; IC =0
−−−100
nA
hFE
DC current gain
VCE = −5 V; IC = −1 mA
200
−−
VCEsat
collector-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−−−150
mV
R1
input resistor
7
10
13
k
Ω
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz −−
3pF



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