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PDTA114TT датащи(PDF) 4 Page - NXP Semiconductors

номер детали PDTA114TT
подробное описание детали  PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open
PDF  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTA114TT датащи(HTML) 4 Page - NXP Semiconductors

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2004 Aug 02
4
Philips Semiconductors
Product specification
PNP resistor-equipped transistors;
R1 = 10 k
Ω, R2 = open
PDTA114T series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm copper strip line.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base
−−50
V
VEBO
emitter-base voltage
open collector
−−5V
IO
output current (DC)
−−100
mA
ICM
peak collector current
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT54
note 1
500
mW
SOT23
note 1
250
mW
SOT346
note 1
250
mW
SOT323
note 1
200
mW
SOT416
note 1
150
mW
SOT883
notes 2 and 3
250
mW
SOT490
notes 1 and 2
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT416
note 1
833
K/W
SOT883
notes 2 and 3
500
K/W
SOT490
notes 1 and 2
500
K/W



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