Unless otherwise specified, V

type apply over the full operating junction temperature range. Specifications appearing in plain type are measured using low

duty cycle pulse testing with T

Symbol

Parameter

Conditions

Min

Typ

Max

Units

I

sk_LDRV

LDRVx Sink Current

LDRVX = 2.5V

1.1

A

R

HDRV

HDRVx Source

On-Resistance

V

V

3.1

Ω

HDRVx Sink

On-Resistance

1.5

Ω

R

LDRV

LDRVx Source

On-Resistance

V

3.1

Ω

LDRVx Sink

On-Resistance

1.1

Ω

Oscillator

F

osc

Oscillator Frequency

260

300

340

kHz

Don_max1, 2

Ch. 1, 2 Maximum

On-Duty Cycle

V

HDRV1 and HDRV2

91

93

%

Don_max3

Ch. 3a, 3b Maximum

On-Duty Cycle

91

94

%

T

on_min

Ch.3 Minimum On-Time

166

ns

SS

OT_delta

HDRVx Delta On Time

HDRV1 and 2 ; HDRV3a and b

150

ns

Error Amplifier

I

FB1, 2

Ch. 1, 2 Feedback Input

Bias Current

V

43

150

nA

I

comp1, 2_SC

COMP Output Source

Current

V

0.5

1.1

mA

I

comp1, 2_SK

COMP Output Sink

Current

V

.21

0.4

mA

GBW1, 2

Unity Gain Bandwidth

8.5

MHz

G1, G2

Error amplifier DC Gain

80

dB

SR1, 2

Slew Rate

4.5

V/µs

V

CLAMPH1, 2

Error Amp High Clamp

3.1

V

V

CLAMPL1, 2

Error Amp Low Clamp

1

V

I

FB3

Ch 3 Feedback Input

Bias Current

V

74

nA

I

COMP3_SC

COMP Output Source

Current

V

27

115

µA

I

COMP3_SK

COMP Output Sink

Current

V

27

111

µA

gm3

Transconductance

650

µmho

GI

SNS3

Ch.3 Current Sense

Amplifier Gain

V

4.2

5.4

6.8

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