ACE17430B datasheet(1/6 Pages) ACE

номер детали	ACE17430B

подробное описание детали	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE17430B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

1

Description

ACE17430B uses advanced trench technology and design to provide excellent RDS(ON) with low

gate charge. It can be used in a wide variety of applications.

Features



VDS= 30V , ID=45A



RDS(ON)@ VGS = 10V , TYP= 10

mΩ



RDS(ON)@ VGS = 4.5V , TYP= 13m

Ω

Absolute Maximum Ratings@TA=25℃ unless otherwise noted

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)*AC

TA=25℃

ID

45

A

TA=100℃

21

Drain Current (Pulsed)*B

IDM

150

A

Power Dissipation

TA=25℃

PD

40

W

Operating temperature / Storage temperature

TJ/TSTG

-55~150

℃

A: The value of RθJAis measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

Packaging Type

TO-252

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