ACE17430B datasheet(2/6 Pages) ACE

номер детали	ACE17430B

подробное описание детали	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE17430B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

Ordering information

ACE17430B XX + H

Electrical Characteristics TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=250µA

Zero gate voltage drain current

IDSS

VDS=30V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=250µA

1.5

2.2

Gate leakage current

IGSS

VGS=±20V, VDS=0V

±100

µA

Drain-source on-state resistance

RDS(ON)

VGS=10V, ID=20A

mΩ

VGS=4.5V, ID=15A

Forward Trans conductance

gFS

VDS =5V, ID= 20A

Diode forward voltage

VSD

ISD=20A, VGS=0V

1.2

Maximum body-diode

continuous current

Switching

Total Gate Charge

VGS=10V, VDS=15V,

ID=20A

Gate-Source Charge

Qgs

2.8

Gate-Drain Charge

Qgd

Turn-on Delay Time

td (on )

VDD=15V, ID=2A,

VGS=10V,RG=3

Ω

Turn-on Rise Time

Turn-off Delay Time

td(off)

Turn-off Fall Time

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=15V,

f=1.0MHz

920

Output Capacitance

Coss

132

Reverse Transfer Capacitance

Crss

103

YM: TO-252

Pb - free

Halogen - free

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